ترانزیستور K25T1202 IGBT تایوانی مارک Infineon پکیج TO-247

ترانزیستور K25T1202 IGBT تایوانی مارک Infineon پکیج TO-247

Specification

roduct Category: IGBT Transistors
Technology: Si
Package/Case: TO-3PN
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.7 V
Maximum Gate Emitter Voltage: – 20 V, 20 V
Continuous Collector Current at 25 C: 25 A
Pd – Power Dissipation: 190 W
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 150 C